High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• actual semiconductor device evaluation, and there is a need to develop a method for obtaining such physical quantities. Here, we propose high–low Kelvin probe force spectroscopy (high–low KPFS), an electrostatic force spectroscopy method using high- and low-frequency AC bias voltages to measure the

• states within the bandgap difficult. Thus, a method for measuring the energy distribution of the interface states must be developed. Kelvin probe force spectroscopy (KPFS) or electrostatic force spectroscopy is a technique that enables energy spectroscopy of interface states in the semiconductor bandgap

• , as described above. Since KPFS does not fix the DC bias voltage but sweeps it over a certain voltage range, it has the advantage of obtaining information on carriers in the energy range corresponding to the swept bias voltage range. For example, the use of electrostatic force spectroscopy to measure

Scanning probe microscopy for energy-related materials

• Rüdiger Berger,
• Benjamin Grévin,
• Philippe Leclère and
• Yi Zhang

Beilstein J. Nanotechnol. 2019, 10, 132–134, doi:10.3762/bjnano.10.12

• the local dielectric distribution based on surface adhesion mapping by SPM [11]. This method is evidently easy in terms of operation and thus has the potential to be widely used. Finally, we want to highlight the contribution “Electrostatic force spectroscopy revealing the degree of reduction of

• individual graphene oxide sheets” by Yue Shen and co-workers. Yue Shen won the prize for the best presentation during the E-MRS conference [12]. Electrostatic force spectroscopy (EFS) is used here to characterize the degree of reduction of uniformly reduced one-atom-thick graphene oxide (GO) sheets at the

Electrostatic force spectroscopy revealing the degree of reduction of individual graphene oxide sheets

• Yue Shen,
• Ying Wang,
• Yuan Zhou,
• Chunxi Hai,
• Jun Hu and
• Yi Zhang

Beilstein J. Nanotechnol. 2018, 9, 1146–1155, doi:10.3762/bjnano.9.106

• Province, Xining 810008, China Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China 10.3762/bjnano.9.106 Abstract Electrostatic force spectroscopy (EFS) is a method for monitoring the electrostatic force microscopy

• ; electrostatic force microscopy; electrostatic force spectroscopy; graphene oxide; Introduction Graphene is a two dimensional (2D) crystal with superior mechanical [1], thermal [2], electrical [3][4] and optical [5] properties. It can be produced using graphene oxide (GO) as a precursor through cost-effective

• reduced with different methods. Although the reduction process of GO sheets has been studied with EFM, little attention has been paid to the use of electrostatic force spectroscopy (EFS) to reveal uniformly reduced GO sheets with various degree of reduction. Previously, EFS was proposed to distinguish